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B.H. Do

Observed names: B. H. Do, Benny Do
OpenAlex ID: A5113915182
InGaAs Negative Capacitance FETs Using HfZrOx: Impact of Annealing Conditions on the Ferroelectric and Steep Subthreshold Slope Characteristics
2018 · H.Q. Luc, Y.K. Zhang, et al. · International Conference on Solid State Devices and Materials (SSDM)
Gate-All-Around In0.53Ga0.47As MOSFETs with Ion=3.3mA/µm (Vgs-Vth=Vds=1V) and gm=3.56 mS/µm (Vds=0.5V) using Plasma-Enhanced Atomic Layer Deposition Technique
2018 · Y.D. Jin, H.Q. Luc, et al. · International Conference on Solid State Devices and Materials (SSDM)
Enhancing the Performance of Ni-In0.53Ga0.47As MOSFETs Using Post Silicon Dopant Process
2017 · H. Q. Luc, W. J. Lin, et al. · International Conference on Solid State Devices and Materials (SSDM)
Integration of Photodefinable Polybenzoxazole as Intermetal Dielectric for GaAs HBT Technology
2014 · Jiro Yota, Benny Do · ECS Transactions
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Integration of Photodefinable Polybenzoxazole as Intermetal Dielectric for GaAs HBT Technology
2014 · Jiro Yota, Benny Do · ECS Meeting Abstracts
Works count: 5
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