Get started
Author

R. C. Glass

Semi-insulating 6H–SiC grown by physical vapor transport
1995 · H. McD. Hobgood, R. C. Glass, et al. · Applied Physics Letters · 166
Progress in SiC: from material growth to commercial device development
1999 · C.H. Carter, Jr., V.F. Tsvetkov, et al. · Materials Science and Engineering B · 132
The status of SiC bulk growth from an industrial point of view
2000 · St.G. Müller, R.C. Glass, et al. · Journal of Crystal Growth · 126
SiC Seeded Crystal Growth
1997 · R.C. Glass, D. Henshall, et al. · physica status solidi (b) · 122
Deep level transient spectroscopic and Hall effect investigation of the position of the vanadium acceptor level in 4H and 6H SiC
1996 · J. R. Jenny, J. Skowronski, et al. · Applied Physics Letters · 92
Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications
2000 · H. McD. Hobgood, M.F. Brady, et al. · Materials science forum · 91
Chemistry, microstructure, and electrical properties at interfaces between thin films of titanium and alpha (6H) silicon carbide (0001)
1995 · L.M. Porter, R.F. Davis, et al. · Journal of materials research/Pratt's guide to venture capital sources · 88
Structural macro-defects in 6H-SiC wafers
1993 · R.C. Glass, L.O. Kjellberg, et al. · Journal of Crystal Growth · 77
High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method
2002 · J. R. Jenny, St G. Müller, et al. · Journal of Electronic Materials · 76
Silicon carbide for power devices
2002 · J.W. Palmour, R. Singh, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 73
On the compensation mechanism in high-resistivity 6H–SiC doped with vanadium
1995 · J. R. Jenny, M. Skowronski, et al. · Journal of Applied Physics · 73
4H-SiC MESFET's with 42 GHz f/sub max/
1996 · S. Sriram, G. Augustine, et al. · IEEE Electron Device Letters · 70
Sublimation-Grown Semi-Insulating SiC for High Frequency Devices
2003 · Stephan G. Müller, M.F. Brady, et al. · Materials science forum · 59
Characterization of Polishing‐Related Surface Damage in (0001) Silicon Carbide Substrates
1995 · W. Qian, M. Skowronski, et al. · Journal of The Electrochemical Society · 57
PDF
SiC-Seeded Crystal Growth
1997 · R.C. Glass, D. Henshall, et al. · MRS Bulletin · 56
High-purity semi-insulating 4H-SiC for microwave device applications
2003 · J. R. Jenny, D. P. Malta, et al. · Journal of Electronic Materials · 55
Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices
2004 · Jason R. Jenny, D.P. Malta, et al. · Materials science forum · 54
Growth of 3CSiC on on-axis Si(100) substrates by chemical vapor deposition
1995 · O. Kordina, L.-O. Björketun, et al. · Journal of Crystal Growth · 54
Epitaxial nucleation, growth and characterization of highly oriented, (100)-textured diamond films on silicon
1994 · B.A. Fox, B.R. Stoner, et al. · Diamond and Related Materials · 54
Hall effect measurements on boron-doped, highly oriented diamond films grown on silicon via microwave plasma chemical vapor deposition
1993 · B. R. Stoner, Chien-teh Kao, et al. · Applied Physics Letters · 53
Chemical and structural analyses of the titanium nitride/alpha (6H)-silicon carbide interface
1992 · R. C. Glass, L. M. Spellman, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 52
Hollow-core screw dislocations in 6H-SiC single crystals: A test of Frank’s theory
1997 · Weimin Si, Michael Dudley, et al. · Journal of Electronic Materials · 51
SiC Seeded Boule Growth
1998 · Valeri F. Tsvetkov, R.C. Glass, et al. · Materials science forum · 48
Growth of epitaxial 3C-SiC films on (111) silicon substrates at 850 °C by reactive magnetron sputtering
1993 · Q. Wahab, R. C. Glass, et al. · Journal of Applied Physics · 48
Progress in the industrial production of SiC substrates for semiconductor devices
2001 · St.G Müller, R.C Glass, et al. · Materials Science and Engineering B · 47
Works count: 55
Citation count: 2,327
H-index: 31
I10-index: 40
Year
Topic
Type