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Duc V. Dinh

Lattice parameters of ScxAl1−xN layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy
2023 · Duc V. Dinh, Jonas Lähnemann, et al. · Applied Physics Letters · 64
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Surface diffusion and layer morphology of ((112¯2)) GaN grown by metal-organic vapor phase epitaxy
2012 · Simon Ploch, Tim Wernicke, et al. · Journal of Applied Physics · 51
GHz bandwidth semipolar (112¯2) InGaN/GaN light-emitting diodes
2016 · Duc V. Dinh, Zhiheng Quan, et al. · Optics Letters · 49
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Size-Dependent Bandwidth of Semipolar ( $11\overline {2}2$ ) Light-Emitting-Diodes
2018 · M. Haemmer, B. Roycroft, et al. · IEEE Photonics Technology Letters · 45
Polarity determination of polar and semipolar (112¯2) InN and GaN layers by valence band photoemission spectroscopy
2013 · D. Skuridina, D. V. Dinh, et al. · Journal of Applied Physics · 35
Synthesis and field emission properties of triangular-shaped GaN nanowires on Si(100) substrates
2008 · Duc V. Dinh, S.M. Kang, et al. · Journal of Crystal Growth · 34
Single phase (112¯2) AlN grown on (101¯0) sapphire by metalorganic vapour phase epitaxy
2014 · Duc V. Dinh, M. Conroy, et al. · Journal of Crystal Growth · 32
Significant contribution from impurity-band transport to the room temperature conductivity of silicon-doped AlGaN
2018 · Pietro Pampili, Duc V Dinh, et al. · Journal of Physics D Applied Physics · 31
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Growth and characterizations of semipolar (112¯2) InN
2012 · Duc V. Dinh, D. Skuridina, et al. · Journal of Applied Physics · 28
Influence of AlN buffer layer thickness and deposition methods on GaN epitaxial growth
2009 · J.H. Yang, S.M. Kang, et al. · Thin Solid Films · 26
Effect of V/III ratio on the growth of ( 112¯2 ) AlGaN by metalorganic vapour phase epitaxy
2015 · Duc V. Dinh, S.N. Alam, et al. · Journal of Crystal Growth · 25
How to obtain metal-polar untwinned high-quality (1 0 −1 3) GaN on m-plane sapphire
2018 · Nan Hu, Duc V. Dinh, et al. · Journal of Crystal Growth · 22
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High-temperature thermal annealing of nonpolar (1 0 1 ¯ 0) AlN layers sputtered on (1 0 1 ¯ 0) sapphire
2018 · Duc V. Dinh, Nan Hu, et al. · Journal of Crystal Growth · 21
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Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties
2019 · Duc V. Dinh, Nan Hu, et al. · Scientific Reports · 20
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High Bandwidth Freestanding Semipolar (11–22) InGaN/GaN Light-Emitting Diodes
2016 · Zhiheng Quan, Duc V. Dinh, et al. · IEEE photonics journal · 20
Semipolar (112) InGaN light‐emitting diodes grown on chemically–mechanically polished GaN templates
2015 · Duc V. Dinh, Mahbub Akhter, et al. · physica status solidi (a) · 19
MOVPE growth and high-temperature annealing of (10 1¯ 0) AlN layers on (10 1¯ 0) sapphire
2018 · Duc V. Dinh, Hiroshi Amano, et al. · Journal of Crystal Growth · 18
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Enhanced UV luminescence from InAlN quantum well structures using two temperature growth
2014 · Vitaly Z. Zubialevich, Thomas C. Sadler, et al. · Journal of Luminescence · 17
Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers
2014 · D. Skuridina, D.V. Dinh, et al. · Applied Surface Science · 16
Silicon doping of semipolar (112¯2)AlxGa1−xN(0.50≤x≤0.55)
2016 · Duc V. Dinh, Pietro Pampili, et al. · Journal of Crystal Growth · 15
Semipolar (202̅3) nitrides grown on 3C–SiC/(001) Si substrates
2015 · Duc V Dinh, S Presa, et al. · Semiconductor Science and Technology · 15
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Synthesis of GaN nanowires and nanorods via self-growth mode control
2008 · S.M. Kang, T.I. Shin, et al. · Microelectronics Journal · 15
Optical properties of ScN layers grown on Al2O3(0001) by plasma-assisted molecular beam epitaxy
2023 · Duc V. Dinh, Frank Peiris, et al. · Applied Physics Letters · 13
Growth of semipolar (10$ \bar 1\bar 3 $) InN on m ‐plane sapphire using MOVPE
2010 · Duc V. Dinh, M. Pristovsek, et al. · physica status solidi (RRL) - Rapid Research Letters · 13
A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content
2020 · Lucia Spasevski, Gunnar Kusch, et al. · Journal of Physics D Applied Physics · 12
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Works count: 62
Citation count: 843
H-index: 17
I10-index: 34
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