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Author

Ichiro Seike

Observed institution: Kyoto Institute of Technology
ORCID: 0009-0005-2155-1818
Observed ORCID: 0009-0005-2155-1818
OpenAlex ID: A5116739159
Ni/rutile GeO2 vertical Schottky barrier diode on Nb-doped TiO2 substrate using Sb-doped graded Ge y Sn1−y O2 buffer layers
2025 · Kazutaka Kanegae, Kazuki Shimazoe, et al. · Applied Physics Express · 11
Enhanced growth temperature window and Sb doping of rutile GeO 2 enabled by graded buffer layers
2025 · Kazuki Shimazoe, Ichiro Seike, et al. · Japanese Journal of Applied Physics · 7
Bismuth-assisted stabilization of rutile GeO2 thin films grown by Mist-CVD
2026 · Carolina Fernández-Saiz, Kazuki Shimazoe, et al. · Applied Surface Science · 2
Epitaxial growth of Rutile GeO2 by Mist CVD and its application to Schottky barrier diodes
2026 · Hiroyuki Nishinaka, Kazutaka Kanegae, et al.
Bismuth-Assisted Stabilization of Rutile GeO₂ Thin Films Grown by Mist-CVD
2025 · Carolina Fernandez Saiz, Kazuki Shimazoe, et al. · SSRN Electronic Journal
Works count: 5
Citation count: 20
H-index: 2
I10-index: 1
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