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Sangwan Kim
Institution:
Sogang University
Observed institution:
Sogang University
ORCID:
0000-0002-6492-7740
Observed ORCID:
0000-0002-6492-7740
OpenAlex ID:
A5121044484
Vertical Ferroelectric–Metal Field-Effect Transistor (V-FeMFET) With Channel-All-Around (CAA) Structure
2026
·
Heebum Kang
, Seungmin Kang
, et al.
·
IEEE Transactions on Electron Devices
·
2
Non-destructive read 1T-DRAM with p–n junction gate for overcoming scaling limitations
2026
·
Eungi Hwang
, Jun Lee
, et al.
·
AIP Advances
·
1
Mitigation of the Row-Hammer Effect in Sub-20 nm Dynamic Random-Access Memory (DRAM) Using Low-k Dielectrics
2026
·
Jeongbeen Park
, Dongseok Oh
, et al.
·
Microelectronics
PDF
High-speed monolithic 3D ternary CMOS design with junctionless FETs
2026
·
Hyunho Ahn
, Jiwon Han
, et al.
·
Semiconductor Science and Technology
Analysis of Transient Response of Negative Capacitance Field-Effect Transistor
2025
·
Dong Keun Lee
, Seungwon Go
, et al.
·
IEEE Access
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Works count:
5
Citation count:
3
H-index:
1
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