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Yi Pei

Observed name: Pei, Yi
ORCID: 0000-0003-0906-1056
Observed ORCID: 0000-0003-0906-1056
OpenAlex ID: A5121118739
A 0.03 GHz to 6 GHz Gallium Nitride Monolithic Microwave Integrated Circuit Power Amplifier with Improved OIP3/Pdc Using Nonlinear Cancellation
2026 · Bowen Tang, Hui Jin, et al. · Chinese Journal of Electronics · 3
First Integration of GaN Low-Voltage PA MMIC into Mobile Handsets with Superior Efficiency Over 50%
2025 · Haochen Zhang, Yue Sun, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 2
Structural Design of GaN MIS-HEMTs for Low-Earth-Orbit Radiation Hardness: Integrating Back-Barrier and Deep Source Via
2026 · Chenrui Zhang, Yixu Yao, et al. · IEEE Transactions on Electron Devices
Spatially resolved I-DLTS mapping of hole migration induced traps in AlGaN/GaN HEMTs
2026 · Chenrui Zhang, Yixu Yao, et al. · Journal of Physics D Applied Physics
A 1.58-W/mm 2 Extreme-Power-Density Ka-Band GaN PA with Electro-Thermal-Mechanical Co-Design in CMOS+GaN Heterogeneous Integration
2026 · R. Matthew Ma, H. Bruce Bao, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
AlN Buffered K/Ku Bands GaN RF Power HEMTs with in-Situ SiN Silicidation Enabled Low $R_{C}=0.03 \Omega \cdot \text{mm}$ at 500 K and Record High $P_{\text{out}}=25 \mathrm{W}/\text{mm}$
2026 · Kun Zhang, Hong Zhou, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Regrown-Ohmic-Contacts-Enabled GaN HEMTs With Ultra-Low Noise Figures and Superior Power Merits for Wide-Band LNA Applications
2026 · Haochen Zhang, Mingshuo Zhang, et al. · IEEE Electron Device Letters
Recessed-Gate Enhancement-Mode GaN HEMTs: Pre-Stress-Free High-Voltage Pulse Testing and Its Effects on Dynamic On-Resistance
2026 · Xinyang Wang, Jiayu Zhang, et al. · IEEE Journal of Emerging and Selected Topics in Power Electronics
Low Thermal Resistance X-band AlGaN/GaN/AlN-on-SiC RF Power HEMTs with Record P out = 41 W/mm and f T ×BV = 31 THz•V
2025 · Hong Zhou, Kun Zhang, et al. · Technical digest - International Electron Devices Meeting/Technical digest
Thermal and Microwave Performance Enhancement of AlGaN/GaN HEMT Using an Ultra-thin Buffer on Si Substrate for Handset Applications
2025 · Pei, Yi, Liu, Jianan, et al. · AIP Publishing
Supplementary Material
2025 · Qian, Hongtu, Sun, Yue, et al. · AIP Publishing
Works count: 11
Citation count: 5
H-index: 2
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