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Author

Madinabonu Sh. Ibragimova

Observed names: M. Sh. Ibragimova, M.Sh. Ibragimova
Observed institution: Urgench State University
ORCID: 0009-0004-7867-7086
Observed ORCID: 0009-0004-7867-7086
OpenAlex ID: A5121887454
Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation
2026 · J. Sh. Abdullayev, D. A. Qalandarova, et al. · Journal of Electronic Materials · 8
Thermal Expansion Characteristics of Planar and Radial Si/GaAs p–n Heterojunctions
2026 · Jonibek Sh. Abdullayev, Madinabonu Sh. Ibragimova, et al. · East European Journal of Physics · 4
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Cryogenic Material and Electrophysical Changes in Si and GaAs
2026 · Jonibek Sh. Abdullayev, Madinabonu Sh. Ibragimova, et al. · East European Journal of Physics · 4
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Impact of incomplete ionization on the critical electric field of p - n junction structures based on Si and GaAs
2026 · Jo‘shqin Sh. Abdullayev, Dildora A. Qalandarova, et al. · Low Temperature Physics · 4
Mathematical Modeling of Electrostatic Potential in Radial and Planar p–n Junctions: A Comparative Study
2026 · Dildora A. Qalandarova, Madinabonu Sh. Ibragimova, et al. · East European Journal of Physics · 2
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Geometry-Induced Electric Field Enhancement in Planar and Radial Si/GaAs Heterojunctions Under Incomplete Ionization
2026 · J.Sh. Abdullayev, B. Uralov, et al. · DOAJ (DOAJ: Directory of Open Access Journals)
Comparative Analysis of Incomplete Ionization Effects in P-SiC/n-Ga₂O₃ and P-GaN/n-Ga₂O₃ Heterojunctions Over 77–400 K
2026 · O.A. Sattarova, M.Sh. Ibragimova, et al. · DOAJ (DOAJ: Directory of Open Access Journals)
A Systematic Analytical and Numerical Study of Incomplete Dopant Ionization in Germanium Over 4-400 K
2026 · M.Sh. Ibragimova, D.A. Qalandarova, et al. · East European Journal of Physics
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Incomplete Dopant Ionization Effects in GaN Optical Photovoltaic Converters Over 4–400 K for Space Solar Energy Applications
2026 · D.A. Qalandarova, M.Sh. Ibragimova, et al. · East European Journal of Physics
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Critical Size and Doping Thresholds Governing Band Gap Evolution in Semiconductors
2026 · J.Sh. Abdullayev, D.A. Qalandarova, et al. · DOAJ (DOAJ: Directory of Open Access Journals)
Works count: 10
Citation count: 22
H-index: 4
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