Author

Anuda Bibi

Institution: Ghulam Ishaq Khan Institute of Engineering Sciences and Technology

Observed institution: Ghulam Ishaq Khan Institute of Engineering Sciences and Technology

ORCID: 0009-0004-0340-5756

Observed ORCID: 0009-0004-0340-5756

OpenAlex ID: A5122912109

Engineered p-type AlGaN layer for enhanced deep ultraviolet light-emitting diodes performance

2026 · Aiman Fatima, Muhammad Usman, et al. · Journal of Luminescence · 3

High-performance AlGaN-based nanowire light-emitting diodes through an engineered insertion layer in the electron blocking layer

2026 · Anuda Bibi, Muhammad Usman, et al. · Journal of Luminescence · 1

Optimized last quantum barrier design for enhanced performance of Ultraviolet-C (UV-C) AlGaN nanowire light-emitting diodes

2026 · Anuda Bibi, Muhammad Usman, et al. · Journal of Luminescence · 1

Dual tunnel junction engineering for high-IQE GaN/InGaN green LEDs

2026 · Anis Naveed, Muhammad Usman, et al. · Journal of Luminescence

Enhanced performance of InGaN-based green resonant cavity light-emitting diodes with superlattice electron blocking layer

2026 · Haseena Noor, Muhammad Usman, et al. · Journal of Luminescence

Performance Enhancement of Blue InGaN-Based Resonant Cavity Light Emitting Diodes with Graded Electron Blocking Layer

2026 · Haseena Noor, Usman, Muhammad, et al.

Performance Comparison of Aluminum Gallium Nitride Nanowire Ultraviolet-C Light-Emitting Diodes With and Without Electron Blocking Layer

2026 · Anuda Bibi, Usman, Muhammad, et al.

Effect of Hole transport layer thickness on NPB/Alq₃:DCJTB/Alq₃ Organic light emitting diode performance

2025 · Fatima, Aiman, Usman, Muhammad, et al.

Works count: 8

Citation count: 5

H-index: 1

I10-index: