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Anis Naveed
Observed name:
Naveed, Anis
Institution:
Ghulam Ishaq Khan Institute of Engineering Sciences and Technology
Observed institution:
Ghulam Ishaq Khan Institute of Engineering Sciences and Technology
ORCID:
0009-0006-6496-3713
Observed ORCID:
0009-0006-6496-3713
OpenAlex ID:
A5123466679
Engineered p-type AlGaN layer for enhanced deep ultraviolet light-emitting diodes performance
2026
·
Aiman Fatima
, Muhammad Usman
, et al.
·
Journal of Luminescence
·
3
MOCVD Growth of Next-Generation III–V Semiconductor Devices: In Review
2026
·
Zoya Noor
, Muhammad Usman
, et al.
·
Photonics
·
2
PDF
Dual tunnel junction engineering for high-IQE GaN/InGaN green LEDs
2026
·
Anis Naveed
, Muhammad Usman
, et al.
·
Journal of Luminescence
Improving Spectral Selectivity in GaAs IR Photodetectors via AlGaAs Filter Layer: A Simulation Study
2025
·
Naveed, Anis
, Usman, Muhammad
, et al.
Effect of Hole transport layer thickness on NPB/Alq₃:DCJTB/Alq₃ Organic light emitting diode performance
2025
·
Fatima, Aiman
, Usman, Muhammad
, et al.
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Works count:
5
Citation count:
5
H-index:
2
I10-index:
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