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Author

Eungi Hwang

Institution: Myongji University
Observed institution: Myongji University
ORCID: 0009-0007-7086-9616
Observed ORCID: 0009-0007-7086-9616
OpenAlex ID: A5124877641
Multi-Level Cell Structure for Capacitor-Less 1T DRAM With SiGe-Based Separated Data Storing Regions
2025 · Eungi Hwang, Jang Hyun Kim, et al. · IEEE Access · 3
A p-n Junction Gate DRAM for Non-Destructive and Linear Synaptic Modulation in Neuromorphic Computing
2026 · Eungi Hwang, Ilho Myeong, et al. · Silicon · 1
Non-destructive read 1T-DRAM with p–n junction gate for overcoming scaling limitations
2026 · Eungi Hwang, Jun Lee, et al. · AIP Advances · 1
Synaptic Device with Linear Weight Update Using Graded SiGe Body Capacitor-less 1T-DRAM
2026 · Younghoo Ro, Jun Lee, et al. · JSTS Journal of Semiconductor Technology and Science
Dual‐Timescale 3D Synaptic Pillars: Monolithic Integration of Volatile and Nonvolatile Functions for Advanced Neuromorphic Computing
2026 · Eungi Hwang, Ilho Myeong, et al. · Advanced Intelligent Systems
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Energy-efficient hybrid-mode synapse combining high-speed volatile learning and long-term weight retention
2026 · Jun Lee, Eungi Hwang, et al. · Semiconductor Science and Technology
Works count: 6
Citation count: 5
H-index: 1
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