Product
Help
Pricing
About
Jobs
Log in
Get started
Author
Add to collection
Tom Becker
Observed names:
Becker, T.,
Becker, Tom
Institution:
Fraunhofer Institute for Integrated Systems and Device Technology
Observed institution:
Fraunhofer Institute for Integrated Systems and Device Technology
ORCID:
0000-0002-2446-0293
Observed ORCID:
0000-0002-2446-0293
OpenAlex ID:
A5126024754
Improved Power Cycling Reliability through the use of SmartSiC ™ Engineered Substrate for Power Devices
2023
·
Guiot, Eric
, Allibert, Frédéric
, et al.
·
Fraunhofer-Publica (Fraunhofer-Gesellschaft)
·
1
Extraction of Trench Sidewall Capacitance by Linear Component Separation towards Wafer Level Evaluation
2026
·
Maximilian Szabo
, Tom Becker
, et al.
·
Materials science forum
Extraction of Trench Sidewall Capacitance by Linear Component Separation towards Wafer Level Evaluation
2026
·
Szabo, Maximilian
, Becker, Tom
, et al.
·
Fraunhofer-Publica (Fraunhofer-Gesellschaft)
SmartSiC™ 150 & 200mm Engineered Substrate: Addressing Bipolar Degradation of SiC MOSFETs Body Diode
2025
·
Guiot, Eric
, Allibert, Frédéric
, et al.
·
Fraunhofer-Publica (Fraunhofer-Gesellschaft)
SmartSiC™ 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%
2024
·
Guiot, Eric
, Allibert, Frédéric
, et al.
·
Fraunhofer-Publica (Fraunhofer-Gesellschaft)
Show more works
View as search
Works count:
12
Citation count:
1
H-index:
1
I10-index:
Year
Topic
Type
