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Author

Soohong Eo

Institution: Kookmin University
Observed institution: Kookmin University
ORCID: 0009-0006-2821-992X
Observed ORCID: 0009-0006-2821-992X
OpenAlex ID: A5126641068
Bias-Polarity-Dependent Electrical Characteristics of 1x nm DRAM Capacitors for Robust Cryogenic Memory Applications
2026 · Soohong Eo, Jingyu Park, et al. · IEEE Transactions on Electron Devices · 3
Characterization of a 10 × 10 Amorphous-InGaZnO Memristor Crossbar Array and Its Binary-Neural-Network Performance for 1T1M Integration
2026 · Seung Joo Myoung, Dong Hyeop Shin, et al. · IEEE Transactions on Electron Devices · 2
Lateral Profile of Doping Concentration Extracted From the C‐V Characteristics in Self‐Aligned Top‐Gate Coplanar InGaZnO Thin‐Film Transistors
2026 · Seung Joo Myoung, Chang Il Ryoo, et al. · Advanced Electronic Materials · 1
Oxygen‐Scavenging‐Driven Interlayer Engineering for Balancing Linearity and Retention in IGZO Synaptic Memristors
2026 · Jae Woo Lee, Dong Hyeop Shin, et al. · Advanced Electronic Materials
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Works count: 4
Citation count: 6
H-index: 2
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