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Author

Anli Yang

Observed institution: Hubei Jiufengshan Laboratory
ORCID: 0000-0003-3285-1080
Observed ORCID: 0000-0003-3285-1080
OpenAlex ID: A5127604626
Room-Temperature High-Performance InP/Si Surface-Activated Wafer Bonding for Electronic-Photonic System Integration Applications
2026 · Changlin Wu, Jieqiong Zhang, et al. · ACS Applied Electronic Materials · 2
Twist angle measurement of a SiC-SiC bonded wafer interface via electron diffraction
2026 · Beitian Zheng, Xu Chen, et al. · Surfaces and Interfaces · 1
Interfacial Engineering of SiC/Si Heterostructures via Surface-Activated Direct Bonding: Crystallographic Orientation Effects and Stress Mitigation Strategies
2026 · Xiao Qin, Jieqiong Zhang, et al. · ACS Applied Electronic Materials
Characterization of Twist and Tilt Misalignments in the Direct WaferBonding Process: A Case Study of LiNbO3 on Oxidized Si
2026 · Beitian Zheng, Xu Chen, et al. · Langmuir
Progress in heterogeneous integration of LiNbO3 and LiTaO3 thin films for advanced piezoelectric and optoelectronic applications
2026 · Lichao Wu, Xiao Qin, et al. · Materials Science in Semiconductor Processing
Correction to “Room-Temperature High-Performance InP/Si Surface-Activated Wafer Bonding for Electronic-Photonic System Integration Applications”
2026 · Changlin Wu, Jieqiong Zhang, et al. · ACS Applied Electronic Materials
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Comparison band offsets between SiO 2 /3C-SiC and SiO 2 /4H-SiC heterojunctions by x-ray photoelectron spectroscopy
2026 · Huaping Song, Chenyu Liang, et al. · Journal of Physics D Applied Physics
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Works count: 7
Citation count: 3
H-index: 1
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