Author

Kohei Sasaki

Institution: Novel Crystal Technology, Inc. (Japan)

Observed institution: Novel Crystal Technology, Inc. (Japan)

ORCID: 0000-0002-8923-7703

Observed ORCID: 0000-0002-8923-7703

OpenAlex ID: A5127936944

Structural and electrical characterization of homoepitaxial (1¯02) β -Ga2O3 layers grown by halide vapor phase epitaxy using synchrotron x-ray topography and emission microscopy

2026 · Sayleap Sdoeung, Kohei Sasaki, et al. · Applied Physics Letters · 3

Influence of dislocation clusters on homoepitaxial layers grown by halide vapor phase epitaxy (001) β-Ga2O3 investigated by synchrotron x-ray topography and scanning transmission electron microscopy

2026 · Sayleap Sdoeung, Kohei Sasaki, et al. · Applied Physics Letters · 2

MOCVD Growth of (011) β-Ga2O3 Films: Defect Control and Device Implication

2026 · Md Mosarof Hossain Sarkar, Dong Su Yu, et al. · Crystal Growth & Design · 1

High Schottky barrier formation in tilted-dipole PdCoO2/ β -Ga2O3 (001) interfaces

2026 · Takayuki Harada, Takuro Nagai, et al. · Applied Physics Letters

Works count: 4

Citation count: 6

H-index: 2

I10-index: