Author

S. Karthikeyan

Institutions: KPR Institute of Engineering and Technology, Sengunthar Engineering College (Autonomous)

Observed institutions: KPR Institute of Engineering and Technology, Sengunthar Engineering College (Autonomous)

OpenAlex ID: A5129064646

Comparative Design of p-GaN Gate Al0.23Ga0.77N/GaN HEMTs with Al0.05Ga0.95 and In0.1Ga0.9N Back Barriers for RF Power Applications

2026 · P. Gowtham, G. Vetrichelvi, et al. · Physics of the Solid State · 1

Effect of Al Composition in AlxGa1 – xN Barrier on Performance of Gate Field-Plate GaN HEMTs on SiC Substrates

2026 · M. Saravanan, V. Bhuvaneshwari, et al. · Semiconductors · 1

Enhancing polycrystalline silicon solar cell efficiency with tin oxide antireflective coatings: a morphological, optical, electrical, and thermal study

2026 · D. Raga Sudha, M. R. Kamesh, et al. · Journal of Materials Science Materials in Electronics

Works count: 3

Citation count: 2

H-index: 1

I10-index: