Author

Yiming Wang

Institutions: Jiujiang University, University of Shanghai for Science and Technology, Shandong University, Zhengzhou University, Shanghai University of Medicine and Health Sciences

Observed institutions: Jiujiang University, University of Shanghai for Science and Technology, Shandong University, Zhengzhou University, Shanghai University of Medicine and Health Sciences

ORCID: 0000-0003-1368-9604

Observed ORCID: 0000-0003-1368-9604

OpenAlex ID: A5129068864

Blocking electron current in p-type SnO thin-film transistors to achieve compatibility with 385 ° C back-end-of-line thermal budgets

2026 · Jialong Song, Peng Dai, et al. · Applied Physics Letters · 1

Oxygen-source-driven dielectric and interface engineering of ALD Al2O3 for high-performance and stable p-type SnO thin-film transistors

2026 · Peng Dai, Jialong Song, et al. · Applied Surface Science · 1

Hybrid CMOS Inverter With 519-V/V Gain Based on Highly Stable LTPS p-TFT and IGZO n-TFT

2026 · Peng Dai, Zhou Xu, et al. · IEEE Electron Device Letters · 1

“Rock-solid” CoB-based sponge electrodes for overall seawater splitting at industrial-level current density

2026 · Yiming Wang, Liugang Wu, et al. · Journal of Materials Chemistry A · 1

Diamond-based deep ultraviolet vortex beam generation with suppressed higher-order diffractions

2026 · Yuanhang Wang, Chenglong Zheng, et al. · Applied Physics Letters

Ultra-Steep-Slope and High-On/Off-Ratio P-Channel SnO Thin-Film Transistors via Monolithic Threshold-Switching Integration

2026 · Zening Gao, Jingzhou Shi, et al. · IEEE Electron Device Letters

Interface engineering toward hysteresis-free ambipolar SnO thin-film transistors for BEOL integration

2026 · Peng Dai, Zening Gao, et al. · Applied Surface Science

High-Performance Top-Gate and Dual-Gate p-Type SnO Thin-Film Transistors Compatible with 350 °C Back-End-of-Line Processes

2026 · Jialong Song, Yiwen Yao, et al. · ACS Applied Materials & Interfaces

Enhancement of p-Type SnO Thin-Film Transistors via Self-Assembled Monolayers as Passivation and Interfacial Modification

2026 · Ning Wang, Yiwen Yao, et al. · ACS Applied Electronic Materials

Sulfur–copper bond mediated construction of carbon nitrides/cuprous oxide Z-scheme heterojunctions for boosted photocatalytic hydrogen evolution

2026 · Yiming Wang, Ruirui Wang, et al. · Applied Surface Science

P-Type SnO Thin-Film Transistor With Ultra-Thin Channel and Extremely High ON/OFF Current Ratio

2026 · Yiwen Yao, Jialong Song, et al. · IEEE Electron Device Letters

Highly Stable BEOL-Compatible 78 nm IGZO TFT (11.3 mV ∆V th at 10 ks/125 °C) with ITO S/D Contact and F Doping

2026 · Shaocong Lv, Xianglong Li, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

Works count: 12

Citation count: 4

H-index: 1

I10-index: