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航 原田

Observed names: 原田 航, 原田, 航, 原田航
OpenAlex ID: A5132014800
Pd0価ドーピングによる窒化銅半導体のバンド構造制御と熱電特性
2023 · 松崎, 功佑, 片瀬, 貴義, et al. · Institutional Repositories DataBase (IRDB)
窒化イットリウムの点欠陥に関する第一原理計算
2020 · 早川, 周作, Hayakawa, Shusaku, et al. · Institutional Repositories DataBase (IRDB)
Achieving non-degenerate Zn3N2 thin films by near room temperature sputtering deposition
2019 · 熊谷, 悠, Kumagai, Yu, et al. · Institutional Repositories DataBase (IRDB)
Theoretical prediction of strain-induced carrier effective mass modulation in 4H-SiC and GaN
2019 · 黒岩, 祐一郎, Kuroiwa, Yuichiro, et al. · Institutional Repositories DataBase (IRDB)
Strain-induced carrier effective mass modulation in 4H-SiC and GaN: A first-principles study
2019 · 黒岩, 祐一郎, Kuroiwa, Yuichiro, et al. · Institutional Repositories DataBase (IRDB)
Native point defects and carbon clusters in 4H-SiC: A hybrid functional study
2019 · 原田, 航, Harada, Kou, et al. · Institutional Repositories DataBase (IRDB)
High-Mobility p-Type and n-Type Copper Nitride Semiconductors by Direct Nitriding Synthesis and In Silico Doping Design
2018 · 松崎 功佑, Kosuke Matsuzaki, et al. · Institutional Repositories DataBase (IRDB)
Theoretical study of doping limits in semiconductors
2017 · 西谷, 宣彦, Nishiya, Nobuhiko, et al. · Institutional Repositories DataBase (IRDB)
Carrier-induced band-gap variation and point defects in Zn3N2 from first principles
2017 · 熊谷 悠, Yu Kumagai, et al. · Institutional Repositories DataBase (IRDB)
化合物半導体における点欠陥形成とドーピング限界の理論的検討
2017 · 西谷, 宣彦, Nishiya, Nobuhiko, et al. · Institutional Repositories DataBase (IRDB)
半導体におけるドーピング限界の理論的研究
2016 · 西谷, 宣彦, Nishiya, Nobuhiko, et al. · Institutional Repositories DataBase (IRDB)
第一原理計算による窒化銅中の固有点欠陥及び不純物点欠陥の解析
2016 · 原田 航, K. Harada, et al. · Institutional Repositories DataBase (IRDB)
窒化銅中の点欠陥の第一原理計算
2016 · 原田, 航, Harada, Kou, et al. · Institutional Repositories DataBase (IRDB)
Works count: 14
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