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Hyeong Jun Joo

Observed name: Joo, Hyeong Jun
Institution: Soongsil University
Observed institution: Soongsil University
ORCID: 0009-0000-2098-5861
Observed ORCID: 0009-0000-2098-5861
OpenAlex ID: A5134019808
Suppressed Negative DIBL of Ferroelectric HEMT With Gate-Align Patterned AlScN Stack
2025 · Gyuhyung Lee, Hyeong Jun Joo, et al. · IEEE Electron Device Letters · 4
Demonstration of ferroelectric GaN transistors with area-ratio-controlled AlScN-based MFMIS gate stack
2026 · Jongmin Park, Hyeong Jun Joo, et al. · Applied Physics Letters · 1
Effect of AlScN Polarization Suppression in the Access-Region for Ferroelectric GaN HEMTs
2026 · Hyeong Jun Joo, Gyuhyung Lee, et al. · IEEE Transactions on Electron Devices · 1
Monolithic GaN Systems Combining Non-Volatile Memory and Analog Computing via Area-Ratio-Engineered Ferroelectric AlScN Gate Stacks
2026 · Joo, Hyeong Jun, Park, Jong Min, et al. · arXiv (Cornell University)
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Effects of Dielectric Interlayer on Polarization Switching and Rectifying Characteristics in Al0.8Sc0.2N/HfO2 Ferroelectric Diodes
2026 · Jong Min Park, Hyeong Jun Joo, et al. · Micromachines
Geometric and Area Scaling Effects on Ferroelectric Properties of Al₀.₈Sc₀.₂N-Based Capacitive Memory
2026 · Yoojin Lim, Hyeong Jun Joo, et al. · IEEE Journal of the Electron Devices Society
Works count: 7
Citation count: 9
H-index: 2
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