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Author

Wenjun Zhang

ORCID: 0009-0005-5780-1022
Observed ORCID: 0009-0005-5780-1022
OpenAlex ID: A5134665366
Enhanced 2 P r in 5-nm HZO Capacitors Under 300 °C RTP via Nb Electrode Engineering
2026 · Keyou Tong, Jing Xu, et al. · IEEE Electron Device Letters
WFM-Free Linear Threshold Voltage Modulation in Stacked Nanosheet GAA FETs via TMA-Regulated La-Dipole Engineering
2026 · Wenjun Zhang, Jing Xu, et al. · IEEE Electron Device Letters
Excellent Ferroelectricity in 6-nm HZO With Sub-5-nm Nb Electrodes and Nb 2 O 5 Interface Engineering at Low-Thermal Budget of 300 ° C
2026 · Keyou Tong, Xuanyi Li, et al. · IEEE Electron Device Letters
35% Specific Contact Resistivity Reduction in Titanium-Based Ohmic Contact With Ultrathin Low-Oxide-Formation-Enthalpy Yttrium Interlayer
2026 · Binbin Xu, Jing Xu, et al. · IEEE Electron Device Letters
Demonstration of EOT Scaling in Si NSFETs Using Dead-Layer-Suppressed HfZrO 2 /ZrO 2 Stacks Near Morphotropic Phase Boundary
2026 · Keyou Tong, Jing Xu, et al. · IEEE Electron Device Letters
Linear and Precise V FB Modulation via LaFMD-Induced Dipoles in TiN/HfO 2 /SiO 2 Gate Stacks Without EOT and Dielectric Thickness Penalty
2026 · Wenjun Zhang, Jing Xu, et al. · IEEE Electron Device Letters
Linear V FB Tuning and Interface Improvement via TMA/Ultrathin HfO 2 Dual-Buffer in La 2 O 3 Dipole-First Gate Stacks
2026 · Wenjun Zhang, Jing Xu, et al. · IEEE Transactions on Electron Devices
Flat-Band Voltage Tuning and Interface Improvement via La Based Pre-Treatment and Post-Metallization/Deposition Annealing
2026 · Zeyu Fan, Wenjun Zhang, et al. · ECS Journal of Solid State Science and Technology
High-Performance P-Channel FDSOI MOSFETs via Modified Silicide-as-Diffusion-Source-Induced Dopant Segregation (M-SADS)
2026 · Binbin Xu, Jing Xu, et al. · IEEE Electron Device Letters
Works count: 10
Citation count: 6
H-index: 1
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