Author

Minkyun Kang

Institutions: Tech University of Korea, Seoul National University

Observed institutions: Tech University of Korea, Seoul National University

ORCID: 0009-0006-5663-4856

Observed ORCID: 0009-0006-5663-4856

OpenAlex ID: A5134896321

Interface-Engineered, Low-Damage IGZO/HfO2 Charge-Trapping Memory Devices Fabricated Using a Remote Plasma ALD Process

2026 · Inkook Hwang, Hyeonwu Nam, et al. · Micromachines · 3

A Fully Embedded Stretchable Three-Dimensional Circuit via Highly Viscous Polydimethylsiloxane Bath

2026 · Christopher Jiyong Yoo, Jinsu Yoon, et al. · Transactions on Electrical and Electronic Materials · 2

Effect of Plasma Excitation Mode on Rutile TiO2 MIM Capacitors Grown on RuO2 Seed Electrodes

2026 · Yongwoon Jang, Byungwook Kim, et al. · Nanomaterials

Selective Plasma Mode Modulation in HfO2 Charge Trap Layers via RP/DP/RP Atomic Layer Deposition for Enhanced Memory Performance and Interface Quality

2026 · Byungwook Kim, Yongwoon Jang, et al. · Micromachines

Works count: 4

Citation count: 5

H-index: 2

I10-index: