Author

Chia-Hung Lin

Institution: Novel Crystal Technology, Inc. (Japan)

Observed institution: Novel Crystal Technology, Inc. (Japan)

ORCID: 0009-0001-8843-1491

Observed ORCID: 0009-0001-8843-1491

OpenAlex ID: A5135372601

Structural and electrical characterization of homoepitaxial (1¯02) β -Ga2O3 layers grown by halide vapor phase epitaxy using synchrotron x-ray topography and emission microscopy

2026 · Sayleap Sdoeung, Kohei Sasaki, et al. · Applied Physics Letters · 3

Influence of dislocation clusters on homoepitaxial layers grown by halide vapor phase epitaxy (001) β-Ga2O3 investigated by synchrotron x-ray topography and scanning transmission electron microscopy

2026 · Sayleap Sdoeung, Kohei Sasaki, et al. · Applied Physics Letters · 2

MOCVD Growth of (011) β-Ga2O3 Films: Defect Control and Device Implication

2026 · Md Mosarof Hossain Sarkar, Dong Su Yu, et al. · Crystal Growth & Design · 1

High-concentration Ge doping of (001) β-Ga 2 O 3 by halide vapor phase epitaxy beyond the practical Si doping limit

2026 · Yuichi Oshima, Takayoshi Oshima, et al. · Science and Technology of Advanced Materials

Investigation of origin of polycrystalline defect in homoepitaxial (01¯1¯) β -Ga2O3 layers grown by halide vapor phase epitaxy using synchrotron x-ray topography and energy-dispersive x-ray spectroscopy

2026 · Sayleap Sdoeung, Kohei Sasaki, et al. · Applied Physics Letters

Works count: 5

Citation count: 6

H-index: 2

I10-index: