KOHA Co., Ltd. (Japan)

Alternate names: KOHA Co., Ltd., 株式会社光波

ROR: 00jbh0w52

OpenAlex ID: I4405263970

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

2012 · Masataka Higashiwaki, Kohei Sasaki, et al. · Applied Physics Letters · 1,866

High-quality β-Ga 2 O 3 single crystals grown by edge-defined film-fed growth

2016 · Akito Kuramata, Kimiyoshi Koshi, et al. · Japanese Journal of Applied Physics · 1,086

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

2013 · Masataka Higashiwaki, Kohei Sasaki, et al. · Applied Physics Letters · 759

Large-size β-Ga2O3 single crystals and wafers

2004 · Encarnación G. Víllora, Kiyoshi Shimamura, et al. · Journal of Crystal Growth · 641

Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

2012 · Kohei Sasaki, Akito Kuramata, et al. · Applied Physics Express · 635

Development of gallium oxide power devices

2013 · Masataka Higashiwaki, Kohei Sasaki, et al. · physica status solidi (a) · 602

Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping

2008 · Encarnación G. Víllora, Kiyoshi Shimamura, et al. · Applied Physics Letters · 463

Correlation between blue luminescence intensity and resistivity in β -Ga2O3 single crystals

2013 · T. Onuma, S. Fujioka, et al. · Applied Physics Letters · 389

Si-Ion Implantation Doping in β-Ga2O3and Its Application to Fabrication of Low-Resistance Ohmic Contacts

2013 · Kohei Sasaki, Masataka Higashiwaki, et al. · Applied Physics Express · 349

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MBE grown Ga2O3 and its power device applications

2013 · Kohei Sasaki, Masataka Higashiwaki, et al. · Journal of Crystal Growth · 348

Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions

2014 · Takafumi Kamimura, Kohei Sasaki, et al. · Applied Physics Letters · 224

Excitation and photoluminescence of pure and Si-doped β-Ga2O3 single crystals

2008 · Kiyoshi Shimamura, Encarnación G. Víllora, et al. · Applied Physics Letters · 194

Rf-plasma-assisted molecular-beam epitaxy of β-Ga2O3

2006 · Encarnación G. Víllora, Kiyoshi Shimamura, et al. · Applied Physics Letters · 169

Polarized Raman spectra in β-Ga2O3 single crystals

2014 · T. Onuma, S. Fujioka, et al. · Journal of Crystal Growth · 168

Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy

2014 · Kohei Sasaki, Masataka Higashiwaki, et al. · Journal of Crystal Growth · 147

Structural evaluation of defects in β-Ga 2 O 3 single crystals grown by edge-defined film-fed growth process

2016 · Osamu Ueda, Noriaki Ikenaga, et al. · Japanese Journal of Applied Physics · 141

Temperature dependence of Ce:YAG single-crystal phosphors for high-brightness white LEDs/LDs

2015 · Stelian Arjoca, Encarnación G Víllora, et al. · Materials Research Express · 141

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Epitaxial Growth of GaN on (1 0 0) β-Ga2O3 Substrates by Metalorganic Vapor Phase Epitaxy

2004 · Kiyoshi Shimamura, Encarnación G. Víllora, et al. · Japanese Journal of Applied Physics · 117

Electrical conductivity and lattice expansion of β-Ga2O3 below room temperature

2008 · Encarnación G. Víllora, Kiyoshi Shimamura, et al. · Applied Physics Letters · 108

Epitaxial relationship between wurtzite GaN and β-Ga2O3

2007 · Encarnación G. Víllora, Kiyoshi Shimamura, et al. · Applied Physics Letters · 98

Synthesis of nanosized nitrogen-containing MOx–ZnO (M = W, V, Fe) composite powders by spray pyrolysis and their visible-light-driven photocatalysis in gas-phase acetaldehyde decomposition

2004 · Di Li, Hajime Haneda, et al. · Catalysis Today · 84

Properties of Czochralski grown Ce,Gd:Y3Al5O12 single crystal for white light-emitting diode

2012 · Anastasiya Latynina, Makoto Watanabe, et al. · Journal of Alloys and Compounds · 78

Formation of Semi-Insulating Layers on Semiconducting β-Ga2O3 Single Crystals by Thermal Oxidation

2013 · Takayoshi Oshima, Kenichi Kaminaga, et al. · Japanese Journal of Applied Physics · 69

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β-Ga2O3and single-crystal phosphors for high-brightness white LEDs and LDs, and β-Ga2O3potential for next generation of power devices

2014 · Encarnación G. Víllora, Stelian Arjoca, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 54

β-Ga2O3 Single Crystal as a Photoelectrode for Water Splitting

2013 · Takayoshi Oshima, Kenichi Kaminaga, et al. · Japanese Journal of Applied Physics · 53

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Works count: 41

Citation count: 12,210