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Novel Crystal Technology, Inc. (Japan)

Alternate names: Novel Crystal Technology, Novel Crystal Technology, Inc., 株式会社ノベルクリスタルテクノロジー
ROR: 05dw08g08
OpenAlex ID: I4405265664
High-quality β-Ga 2 O 3 single crystals grown by edge-defined film-fed growth
2016 · Akito Kuramata, Kimiyoshi Koshi, et al. · Japanese Journal of Applied Physics · 1,086
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β-Gallium oxide power electronics
2022 · Andrew J. Green, James Speck, et al. · APL Materials · 563
Perspective—Opportunities and Future Directions for Ga2O3
2017 · Michael A. Mastro, Akito Kuramata, et al. · ECS Journal of Solid State Science and Technology · 492
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Enhancement-Mode Ga 2 O 3 Vertical Transistors With Breakdown Voltage >1 kV
2018 · Zongyang Hu, Kazuki Nomoto, et al. · IEEE Electron Device Letters · 331
Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties
2018 · Ken Goto, Keita Konishi, et al. · Thin Solid Films · 244
First Demonstration of Ga 2 O 3 Trench MOS-Type Schottky Barrier Diodes
2017 · Kohei Sasaki, Daiki Wakimoto, et al. · IEEE Electron Device Letters · 241
High Breakdown Voltage (−201) $\beta $ -Ga2O3 Schottky Rectifiers
2017 · Jiancheng Yang, Shihyun Ahn, et al. · IEEE Electron Device Letters · 238
Vertical Ga2O3Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm2
2019 · Noah Allen, Ming Xiao, et al. · IEEE Electron Device Letters · 218
2300V Reverse Breakdown Voltage Ga2O3Schottky Rectifiers
2018 · Jiancheng Yang, F. Ren, et al. · ECS Journal of Solid State Science and Technology · 212
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High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3
2017 · Jiancheng Yang, Shihyun Ahn, et al. · Applied Physics Letters · 197
1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μ A/cm2
2018 · Wenshen Li, Zongyang Hu, et al. · Applied Physics Letters · 181
Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors
2018 · Zongyang Hu, Kazuki Nomoto, et al. · Applied Physics Letters · 174
Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage
2018 · A. Y. Polyakov, N. B. Smirnov, et al. · Applied Physics Letters · 163
Ga 2 O 3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology
2017 · Ke Zeng, Joshua S. Wallace, et al. · IEEE Electron Device Letters · 138
Prospects for β-Ga 2 O 3 : now and into the future
2024 · Kohei Sasaki · Applied Physics Express · 137
Recent progress of Ga 2 O 3 power technology: large-area devices, packaging and applications
2023 · Yuan Qin, Zhengpeng Wang, et al. · Japanese Journal of Applied Physics · 137
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Carrier confinement observed at modulation-doped β-(Al x Ga1− x )2O3/Ga2O3 heterojunction interface
2017 · Takayoshi Oshima, Yuji Kato, et al. · Applied Physics Express · 131
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2.5 kV Vertical Ga2O3 Schottky Rectifier With Graded Junction Termination Extension
2022 · Boyan Wang, Ming Xiao, et al. · IEEE Electron Device Letters · 124
Packaged Ga 2 O 3 Schottky Rectifiers With Over 60-A Surge Current Capability
2021 · Ming Xiao, Boyan Wang, et al. · IEEE Transactions on Power Electronics · 124
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2.44 kV Ga2O3 vertical trench Schottky barrier diodes with very low reverse leakage current
2018 · Wenshen Li, Zongyang Hu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 114
Temperature-Dependent Characteristics of Ni/Au and Pt/Au Schottky Diodes on β-Ga2O3
2017 · Shihyun Ahn, F. Ren, et al. · ECS Journal of Solid State Science and Technology · 102
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Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga 2 O 3 substrates with crystal defects
2017 · Takayoshi Oshima, Akihiro Hashiguchi, et al. · Japanese Journal of Applied Physics · 98
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Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio
2021 · Fumio Otsuka, Hironobu Miyamoto, et al. · Applied Physics Express · 94
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High-voltage vertical Ga2O3 power rectifiers operational at high temperatures up to 600 K
2019 · Boyan Wang, Ming Xiao, et al. · Applied Physics Letters · 94
High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate
2017 · Mufasila M. Muhammed, Norah Alwadai, et al. · ACS Applied Materials & Interfaces · 93
Works count: 197
Citation count: 28,430
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