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Sciocs Company Limited (Japan)
Alternate names:
Sciocs Company,
Sciocs Company Limited,
株式会社サイオクス
ROR:
05wge4067
OpenAlex ID:
I4405265851
Works
74
Awards
1
Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV
2015
·
Hiroshi Ohta
, Naoki Kaneda
, et al.
·
IEEE Electron Device Letters
·
223
5.0 kV breakdown-voltage vertical GaN p–n junction diodes
2018
·
Hiroshi Ohta
, Kentaro Hayashi
, et al.
·
Japanese Journal of Applied Physics
·
127
PDF
Applications of lead-free piezoelectric materials
2018
·
Kenji Shibata
, Ruiping Wang
, et al.
·
MRS Bulletin
·
119
Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates
2017
·
Hajime Fujikura
, Taichiro Konno
, et al.
·
Japanese Journal of Applied Physics
·
93
PDF
Two-Step Mesa Structure GaN p-n Diodes With Low ON-Resistance, High Breakdown Voltage, and Excellent Avalanche Capabilities
2019
·
Hiroshi Ohta
, Naomi Asai
, et al.
·
IEEE Electron Device Letters
·
63
Homo-epitaxial growth of n-GaN layers free from carbon-induced mobility collapse and off-angle-dependent doping variation by quartz-free hydride vapor phase epitaxy
2020
·
Hajime Fujikura
, Taichiro Konno
, et al.
·
Applied Physics Letters
·
59
4.9 kV breakdown voltage vertical GaN p–n junction diodes with high avalanche capability
2019
·
Hiroshi Ohta
, Naomi Asai
, et al.
·
Japanese Journal of Applied Physics
·
59
Macrodefect-free, large, and thick GaN bulk crystals for high-quality 2–6 in. GaN substrates by hydride vapor phase epitaxy with hardness control
2018
·
Hajime Fujikura
, Taichiro Konno
, et al.
·
Japanese Journal of Applied Physics
·
51
PDF
Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy
2019
·
Kazutaka Kanegae
, Hajime Fujikura
, et al.
·
Applied Physics Letters
·
50
Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride
2018
·
Fumimasa Horikiri
, Hiroshi Ohta
, et al.
·
Applied Physics Express
·
45
PDF
Recent progress of high-quality GaN substrates by HVPE method
2017
·
Hajime Fujikura
, Takehiro Yoshida
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
·
45
GaN substrates having a low dislocation density and a small off-angle variation prepared by hydride vapor phase epitaxy and maskless-3D
2020
·
Takehiro Yoshida
, Masatomo Shibata
·
Japanese Journal of Applied Physics
·
40
PDF
Excellent wet etching technique using pulsed anodic oxidation for homoepitaxially grown GaN layer
2018
·
Fumimasa Horikiri
, Yoshinobu Narita
, et al.
·
Japanese Journal of Applied Physics
·
37
PDF
Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-high-pressure annealing
2021
·
Kazufumi Hirukawa
, Kensuke Sumida
, et al.
·
Applied Physics Express
·
33
Elimination of macrostep-induced current flow nonuniformity in vertical GaN PN diode using carbon-free drift layer grown by hydride vapor phase epitaxy
2018
·
Hajime Fujikura
, Kentaro Hayashi
, et al.
·
Applied Physics Express
·
33
KNN lead-free piezoelectric films grown by sputtering
2022
·
Kenji Shibata
, Kazutoshi Watanabe
, et al.
·
Applied Physics Letters
·
32
Roughening of GaN homoepitaxial surfaces due to step meandering and bunching instabilities and their suppression in hydride vapor phase epitaxy
2018
·
Hajime Fujikura
, Taichiro Konno
·
Applied Physics Letters
·
31
Roles of carbon impurities and intrinsic nonradiative recombination centers on the carrier recombination processes of GaN crystals
2019
·
Kazunobu Kojima
, Fumimasa Horikiri
, et al.
·
Applied Physics Express
·
30
Deep-level transient spectroscopy of low-free-carrier-concentration n-GaN layers grown on freestanding GaN substrates: Dependence on carbon compensation ratio
2016
·
Takeshi Tanaka
, Kenji Shiojima
, et al.
·
Japanese Journal of Applied Physics
·
30
PDF
Simple wet-etching technology for GaN using an electrodeless photo-assisted electrochemical reaction with a luminous array film as the UV source
2019
·
Fumimasa Horikiri
, Noboru Fukuhara
, et al.
·
Applied Physics Express
·
29
PDF
Wafer-level nondestructive inspection of substrate off-angle and net donor concentration of the n − -drift layer in vertical GaN-on-GaN Schottky diodes
2017
·
Fumimasa Horikiri
, Yoshinobu Narita
, et al.
·
Japanese Journal of Applied Physics
·
26
Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O8 2– ions
2019
·
Masachika Toguchi
, Kazuki Miwa
, et al.
·
Applied Physics Express
·
25
PDF
Development of GaN substrate with a large diameter and small orientation deviation
2017
·
Takehiro Yoshida
, Masayuki Imanishi
, et al.
·
physica status solidi (b)
·
24
Review—Recent Advancement in Charge- and Photo-Assisted Non-Contact Electrical Characterization of SiC, GaN, and AlGaN/GaN HEMT
2017
·
Marshall Wilson
, Andrew Findlay
, et al.
·
ECS Journal of Solid State Science and Technology
·
22
PDF
Impact of damage-free wet etching process on fabrication of high breakdown voltage GaN p–n junction diodes
2019
·
Naomi Asai
, Hiroshi Ohta
, et al.
·
Japanese Journal of Applied Physics
·
19
PDF
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Works count:
74
Citation count:
4,732
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