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SUMCO TECHXIV (Japan)

Alternate names: Komatsu Electronic Metals, SUMCO TECHXIV
Parent institution: Sumco Corporation (Japan)
ROR: 05ty42d13
OpenAlex ID: I4405285632
Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process
2005 · Tsutomu Tezuka, Yoshihiko Moriyama, et al. · Thin Solid Films · 34
Morphology of Microdefects in As-Grown Thinned Silicon Crystals Observed by Synchrotron X-Radiation Plane-Wave Topography
1990 · Yoshinori Chikaura, Masato Imai · Japanese Journal of Applied Physics · 28
Electrical Activity of Defects Induced by Oxygen Precipitation in Czochralski-Grown Silicon Wafers
1999 · Teimouraz Mchedlidze, Kei Matsumoto, et al. · Japanese Journal of Applied Physics · 26
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Prediction of solid–liquid interface shape during CZ Si crystal growth using experimental and global simulation
2004 · Yutaka Shiraishi, Susumu Maeda, et al. · Journal of Crystal Growth · 8
Defect behavior during growth of heavily phosphorus doped Czochralski silicon crystals (II): Theoretical study
2024 · Koji Sueoka, Yasuhito Narushima, et al. · Journal of Applied Physics · 7
Microstructure and Dielectric Properties of BaTiO3 Prepared by Colloidal Processing
1994 · Yoshihiro HIRATA, Akihiko NITTA, et al. · Journal of the Ceramic Society of Japan · 7
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Observation of Microdefects in Thin Silicon Crystals by Means of Plane-Wave Topography Using Synchrotron X-Radiation
1987 · Yoshinori Chikaura, Masato Imai, et al. · Japanese Journal of Applied Physics · 6
Defect behavior during growth of heavily phosphorus-doped Czochralski silicon crystals. I. Experimental study
2024 · Masataka Hourai, Yasuhito Narushima, et al. · Journal of Applied Physics · 5
Discussion on Issues Toward 450 mm Wafer
2006 · Masaharu Watanabe, Tetsuo Fukuda, et al. · ECS Transactions · 5
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Analytical Model for Epitaxial Growth of SiGe from SiH4 and GeH4 in Reduced-Pressure Chemical Vapor Deposition
2008 · Masato Imai, Yoshiji Miyamura, et al. · Japanese Journal of Applied Physics · 1
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Discussion on Issues Toward 450mm Wafer
2006 · Masaharu Watanabe, Tetsuo Fukuda, et al. · ECS Meeting Abstracts
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Photoluminescence and X-ray topography measurements on oxidation-induced stacking faults in silicon wafers
2004 · H. Kakui, M. Fukuzawa, et al. · The European Physical Journal Applied Physics
Works count: 12
Citation count: 198
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