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MRS Internet Journal of Nitride Semiconductor Research

Homepage: cambridge.org
ISSN: 1092-5783
Source type: journal
Alternate names: Materials Research Society Internet journal of nitride semiconductor research, MIJ-NSR, M R S Internet journal of nitride semiconductor research, Nitride semiconductor research, MRS Internet journal, nitride semiconductor research
Fully OA: No
DOAJ: No
OpenAlex ID: S186240106
The Polarity of GaN: a Critical Review
1998 · E. S. Hellman · MRS Internet Journal of Nitride Semiconductor Research · 332
A Review of Dry Etching of GaN and Related Materials
2000 · S.J. Pearton, R. J. Shul, et al. · MRS Internet Journal of Nitride Semiconductor Research · 224
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Suppression of phase separation in InGaN due to elastic strain
1998 · S. Yu. Karpov · MRS Internet Journal of Nitride Semiconductor Research · 198
Electronic Properties of Ga(In)NAs Alloys
2001 · I. A. Buyanova, W. M. Chen, et al. · MRS Internet Journal of Nitride Semiconductor Research · 185
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Absorption Coefficient and Refractive Index of GaN, AlN and AlGaN Alloys
1999 · J. F. Muth, J. D. Brown, et al. · MRS Internet Journal of Nitride Semiconductor Research · 177
The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
1997 · K. Hiramatsu, Y. Kawaguchi, et al. · MRS Internet Journal of Nitride Semiconductor Research · 166
The role of piezoelectric fields in GaN-based quantum wells
1998 · Andreas Hangleiter, Jin Seo Im, et al. · MRS Internet Journal of Nitride Semiconductor Research · 144
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Review of polarity determination and control of GaN
2004 · M. Sumiya, S. Fuke · MRS Internet Journal of Nitride Semiconductor Research · 133
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A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
1999 · John T Torvik, M. Leksono, et al. · MRS Internet Journal of Nitride Semiconductor Research · 128
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Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
1999 · H. Marchand, N. Zhang, et al. · MRS Internet Journal of Nitride Semiconductor Research · 118
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Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
1997 · M.P. Mack, A. Abare, et al. · MRS Internet Journal of Nitride Semiconductor Research · 107
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Growth, Doping and Characterization of AlxGa1−xN Thin Film Alloys on 6H-SiC(0001) Substrates
1996 · M. D. Bremser, W. G. Perry, et al. · MRS Internet Journal of Nitride Semiconductor Research · 105
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High Temperature Elastic Constant Prediction of Some Group III-Nitrides
2001 · Robert R. Reeber, Kai Wang · MRS Internet Journal of Nitride Semiconductor Research · 97
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The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
1999 · A.N. Alexeev, B.A. Borisov, et al. · MRS Internet Journal of Nitride Semiconductor Research · 81
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Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
1998 · H. Marchand, J.P. Ibbetson, et al. · MRS Internet Journal of Nitride Semiconductor Research · 81
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Pinholes, Dislocations and Strain Relaxation in InGaN
1998 · B. Jahnen, M. Albrecht, et al. · MRS Internet Journal of Nitride Semiconductor Research · 80
Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy
2002 · E. Frayssinet, B. Beaumont, et al. · MRS Internet Journal of Nitride Semiconductor Research · 76
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Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces
2002 · R. M. Feenstra, J. E. Northrup, et al. · MRS Internet Journal of Nitride Semiconductor Research · 76
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Novel approach to simulation of group-III nitrides growth by MOVPE
1999 · S. Yu. Karpov, V. G. Prokofyev, et al. · MRS Internet Journal of Nitride Semiconductor Research · 73
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300°C GaN/AlGaN Heterojunction Bipolar Transistor
1998 · Fan Ren, Cammy R. Abernathy, et al. · MRS Internet Journal of Nitride Semiconductor Research · 73
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The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs
2003 · K.A. Filippov, A.A. Balandin · MRS Internet Journal of Nitride Semiconductor Research · 71
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Growth of Ga-face and N-face GaN films using ZnO Substrates
1996 · E. S. Hellman, D. N. E. Buchanan, et al. · MRS Internet Journal of Nitride Semiconductor Research · 71
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Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents
1998 · F. Manyakhin, A. Kovalev, et al. · MRS Internet Journal of Nitride Semiconductor Research · 67
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Epitaxial Growth and Orientation of GaN on (1 0 0) γ-LiAlO2
1997 · E. S. Hellman, Z. Liliental-Weber, et al. · MRS Internet Journal of Nitride Semiconductor Research · 65
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Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
1998 · A. R. Smith, V. Ramachandran, et al. · MRS Internet Journal of Nitride Semiconductor Research · 63
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Works count: 507
Citation count: 8,096
H-index: 46
I10-index: 194
2yr mean citedness:
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