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European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
Source type:
journal
Publisher:
Fully OA:
No
DOAJ:
No
OpenAlex ID:
S4306510121
A miniature dc-to-50 GHz CMOS SPDT distributed switch
2005
·
Mei-Chao Yeh
, Zuo-Min Tsai
, et al.
·
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
·
33
PDF
On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs
2005
·
Angelov
, Desmaris
, et al.
·
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
·
33
A 150 to 220 GHz balanced doubler MMIC using a 50 nm metamorphic HEMT technology
2005
·
C. Schworer
, Y.C. Roca
, et al.
·
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
·
27
A broad-band active frequency doubler operating up to 120 GHz
2005
·
V. Puyal
, A. Konczykowska
, et al.
·
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
·
15
KORRIGAN - a comprehensive initiative for GaN HEMT technology in Europe
2005
·
G. Gauthier
, Y. Mancuso
, et al.
·
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
·
14
A K-band miniature, broadband, high output power HBT MMIC balanced doubler with integrated balun
2005
·
Ching-Chih Weng
, Zuo-Min Tsai
, et al.
·
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
·
13
PDF
Are we there yet? - a metamorphic HEMT and HBT perspective
2005
·
Geok Ing Ng
, K. Radhakrishnan
, et al.
·
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
·
9
Frequency response enhancement of a single strained layer SiGe phototransistor based on physical simulations
2005
·
F Moutier
, J.L. Polleux
, et al.
·
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
·
9
A fully integrated SiGe low phase noise push-push VCO for 82 GHz
2005
·
Wanner
, Schäfer
, et al.
·
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
·
9
Multistage broadband amplifiers based on GaN HEMT technology for 3G/4G base station applications with extremely high bandwidth
2005
·
D. Wiegner
, T. Merk
, et al.
·
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
·
8
A GaAs distributed amplifier with an output voltage of 8.5 V/sub PP/ for 40 Gb/s modulators
2005
·
M. Hafele
, Andreas Trasser
, et al.
·
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
·
6
A GaAsSb/InP HBT circuit technology
2005
·
Годин
, Riet
, et al.
·
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
·
4
Characterization of low-temperature ultrananocrystalline diamond RF MEMS resonators
2005
·
Pacheco
, Zurcher
, et al.
·
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
·
3
A 3.2 W coplanar single-device X-band amplifier with GaAs HBT
2005
·
F. Lenk
, Harald Klockenhoff
, et al.
·
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
·
2
Electromagnetic modeling and characterization of an optically-controlled microwave phase shifter in GaAs integrated technology
2005
·
Charlotte Tripon‐Canseliet
, Salim Faci
, et al.
·
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
·
2
Compact and broadband microstrip power amplifier MMIC with 400-mW output power using 0.15-/spl mu/m GaAs PHEMTs
2005
·
A. Bessemoulin
, Simon J. Mahon
, et al.
·
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
·
2
Behaviour of a TWTA with a single or multicarrier input signal for telecommunication applications
2005
·
Laporte
, Lapierre
, et al.
·
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
·
2
Low noise, low interference automated bias networks for low frequency noise characterization set-up's
2005
·
Borgarino
, Rossi
, et al.
·
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
·
2
Optimised thermal and microwave packaging for wide-band gap transistors: diamond & flip chip
2005
·
Schaffauser
, Vendier
, et al.
·
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
·
2
A 0.18-/spl mu/m 2.4-6 GHz CMOS broadband differential LNA For WLAN and UWB receiver
2005
·
C.-P. Chang
, C.-C. Yen
, et al.
·
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
·
1
Verification of a frequency dispersion model in the performance of a GaAs pHEMT travelling-wave MMIC
2005
·
Ingmar Kallfass
, C. Zhang
, et al.
·
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
·
1
10 Gbit/s differential amplifier demonstrating striplines in 0.18 /spl mu/m CMOS technology
2005
·
B. Milivojevic
, Zhen Gu
, et al.
·
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
·
1
S and C band over 100 W GaN HEMT 1-chip high power amplifiers with cell division configuration
2005
·
Yamanaka
, Iyomasa
, et al.
·
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
·
1
Progress in microwave GaN HEMT grown by MBE on silicon and Smart Cut/spl trade/ engineered substrates for high power applications
2005
·
H. Larhèche
, B. Faure
, et al.
·
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
Dynamics of electric field screening in photoconductive THz sources with spatially patterned excitation
2005
·
Dae Sin Kim
, D. S. Citrin
·
European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005
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Works count:
79
Citation count:
199
H-index:
9
I10-index:
6
2yr mean citedness:
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