Work

High temperature pulsed-gate robustness testing of SiC power MOSFETs

Year: 2015

Type: article

Source: Microelectronics Reliability

DOI: 10.1016/j.microrel.2015.06.141

Authors: A. Fayyaz, A. Castellazzi

Institution: University of Nottingham

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funder: Engineering and Physical Sciences Research Council

Award: Small items of research equipment at the University of Nottingham

OpenAlex ID: W1053145349

FWCI: 2.197

Cites: 11

Cited by: 40

Related to: 10