Flexible Graphene Field-Effect Transistors Encapsulated in Hexagonal Boron Nitride
Year: 2015
Type: article
Source: ACS Nano
Institution: Columbia University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Awards: G2100293023, G3136252263
OpenAlex ID: W1165061335