Work

Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing

Year: 1997

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.118773

Authors: Hui-feng Li, Sima Dimitrijev, H. Barry Harrison, Denis Sweatman

Institution: Griffith University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W133825022

FWCI: 6.647

Cites: 17

Cited by: 327

Related to: 9