Effect of pre-metallization processing and annealing on Ni/Au Schottky contacts in AlGaN/GaN heterostructures
Year: 2006
Type: article
Abstract: After pre-metallization processing of AlGaN/GaN heterostructure with O2 plasma and HF solution, the Ni/Au Schottky contact characteristics were improved obviously and reverse leakage current reduced by three orders. In addition, annealing experiments were carried out at 200—600℃ for 5min in N2 atmosphere on many batches of Schottky diodes, the reverse leakage current decreased further with annealing temperature increasing. Especially after annealing at 600℃ for 5min in N2 atmosphere, the better uniformity of C-V characteristics at different frequencies indicated that surface trap density was reduced when Ni diffused to AlGaN/GaN surface during annealing. On the other hand, the C-V curves moved to the right and the reduction of absolute value of 2D electron gas depletion voltage proved that the Schottky barrier height was elevated when the annealing temperature increased.
Source: Acta Physica Sinica
DOI: 10.7498/aps.55.6085
Authors: Wang Chong, Feng Qian, Hao Yue, Wan Hui, 西安电子科技大学微电子研究所，西安 710071；宽禁带半导体材料与器件教育部重点实验室，西安 710071
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W1422381852