Weak localization in AlxGa1−xAs/GaAs/AlxGa1−xAs heterostructures with electrostatically induced random antidot array
Year: 2008
Type: article
Abstract: Results of experimental study of the weak localization in gated ${\text{Al}}_{x}{\text{Ga}}_{1\ensuremath{-}x}\text{As}/\text{GaAs}/{\text{Al}}_{x}{\text{Ga}}_{1\ensuremath{-}x}\text{As}$ structures with artificial inhomogeneity of potential relief are presented. It has been found that the shape of the magnetoconductivity curve differs significantly from that measured for the homogeneous two-dimensional gas. This difference is shown to be caused by the difference in statistics of closed paths. The area distribution function of closed paths has been obtained using the Fourier transformation of the experimental magnetoconductivity curves taken at different temperatures. The results obtained are in qualitative agreement with the results of computer simulation.
Source: Physical Review B
Institution: M.N. Mikheev Institute of Metal Physics
Language: Latvian
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1492744683