Work

Mechanical cleaning of graphene

Year: 2012

Type: article

Abstract: Contamination of graphene due to residues from nanofabrication often introduces background doping and reduces electron mobility. For samples of high electronic quality, post-lithography cleaning treatments are therefore needed. We report that mechanical cleaning based on contact mode atomic force microscopy removes residues and significantly improves the electronic properties. A mechanically cleaned dual-gated bilayer graphene transistor with hexagonal boron nitride dielectrics exhibited a mobility of ∼36 000 cm2/Vs at low temperature.

Source: Applied Physics Letters

DOI: 10.1063/1.3685504

Authors: A. M. Goossens, V. E. Calado, A. Barreiro, K. Watanabe, T. Taniguchi, L. M. K. Vandersypen

Institutions: Delft University of Technology, National Institute for Materials Science

Language: English

Topic: Graphene research and applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

Funder: Japan Society for the Promotion of Science

Award: Growth of highly oriented h-BN single crystal by chemical vapor deposition method