Composition-Dependent Characterization of Sb 2 Te 3 Thin Films Prepared by Ion Beam Sputtering Deposition
Year: 2010
Type: article
Abstract: The optimization of ion beam sputtering deposition process for Sb 2 Te 3 thin films deposited on BK7 glass substrates is reported. The influence of composition ratio on the thermoelectric properties is investigated. X-ray diffraction shows that the major diffraction peaks of the films match with those of Sb 2 Te 3 . Hall effect and Seebeck coefficient measurement reveal that all the samples are of p-type. The Sb 2 Te 3 thin films exhibit the Seebeck coefficient of 190 μVk −1 and the electrical conductivity of 1.1 × 10 3 Scm −1 when the atomic ratio of Sb to Te is 0.65. Carrier concentration and motility of the films increase with the increasing atomic ratio of Sb to Te. The Sb 2 Te 3 , film with a maximum power factor of 2.26 × 10 −3 Wm −1 K −2 is achieved when annealed at 400° C. Raman measurement shows that the main peaks are at about 120 cm −1 , 252 cm −1 and 450 cm −1 , in agreement with those of V-VI compound semiconductors.
Source: Chinese Physics Letters
Institution: Shenzhen University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1498960339