Work

Resistive switching memory effect of ZrO2 films with Zr+ implanted

Year: 2008

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.2832660

Authors: Qi Liu, Weihua Guan, Shibing Long, Rui Jia, Ming Liu, Junning Chen

Institutions: Chinese Academy of Sciences, Institute of Microelectronics, Anhui University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1506538299

FWCI: 12.28

Cites: 16

Cited by: 278

Related to: 10