Work

Bulk and surface recombination in InAs/AlAs0.16Sb0.84 3.45 μm light emitting diodes

Year: 2000

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.125911

Authors: M. J. Kane, G. Braithwaite, M. T. Emeny, D. Lee, T. Martin, D. R. Wright

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1512172778

FWCI: 6.053

Cites: 17

Cited by: 34

Related to: 10