Year: 1988
Type: article
Abstract: Thin film preparation by chemical deposition is presently attracting considerable attention as it is relatively inexpensive, simple and conve-nient for large areas deposition of II-VI, IV-VI, I-III-VI etc. compound thin films. A variety of substrates like insulator, semiconductor, metal etc can be used since it is a low temperature process. The preparative parameters are easily controllable and better orientation of crystalli-tes and improved grain structure can be obtained (1-3). Using chemical deposition, polycrystalline
DOI: 10.1149/1.2096149
Authors: C. D. Lokhande, V. S. Yermune, S. H. Pawar
Institution: Shivaji University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1513845111