Year: 2005
Type: article
Abstract: We report a high-pressure structural sequence with a degree of reversibility for the functionally graded thermoelectric, narrow band-gap semiconductor $\mathrm{Ag}\mathrm{Sb}{\mathrm{Te}}_{2}$, discovered using angle dispersive x-ray diffraction in a diamond anvil cell with synchrotron radiation at room temperature. The compound undergoes a $B1$ to $B2$ transition between 17 and $26\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$ and proceeds through an intermediate amorphous phase that can be quenched to ambient conditions. The pressure induced structural transition observed in this compound belongs in this ternary cubic family. Density functional theory calculations performed for the $B1$ and $B2$ phases are in good agreement with the experimental results.
Source: Physical Review B
Institutions: University of Nevada, Las Vegas, Kanagawa University
Language: English
Subfield: Geophysics
Field: Earth and Planetary Sciences
Domain: Physical Sciences
Open Access status: green
Funders: National Science Foundation, U.S. Department of Energy, Carnegie Institution of Washington, University of Nevada, Las Vegas, Office of Science, National Nuclear Security Administration, Office of Naval Research, Division of Materials Research, Basic Energy Sciences, Office of Experimental Program to Stimulate Competitive Research, Lawrence Livermore National Laboratory
OpenAlex ID: W1518086319