Work

On Silicon Carbide Thermal Oxidation

Year: 2010

Type: article

Source: The African review of physics

Authors: A. Benfdila, K. Zekentes

Institutions: Mouloud Mammeri University of Tizi-Ouzou, The Abdus Salam International Centre for Theoretical Physics (ICTP)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1526156818

FWCI: 0.49

Cites:

Cited by: 10

Related to: 10