Work

Suppression of anomalous leakage current in tunnel oxides by fluorine implantation to realize highly reliable flash memory

Year: 1999

Type: conference-paper

Source: Symposium on VLSI Technology

DOI: 10.1109/vlsit.1999.799321

Authors: M. Ushiyama, A. Satoh, H. Kume

Institution: Hitachi (Japan)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1528641409

FWCI: 2.902

Cites: 2

Cited by: 5

Related to: 10