Work

Influence of Impact Ionization Process on Current-Voltage Characteristics of Nanoscale Silicon n-Channel MOSFET

Year: 2013

Type: dissertation

Abstract: The current-voltage characteristics of nanoscale silicon n-channel MOSFET with 50 nm channel length are calculated in the present study. Both the electron and hole transport are simulated by means of the en-semble Monte Carlo method. The importance of electron impact ionization process in the transistor chan-nel for drain biases higher than 1 V is shown. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35371

Source: Electronic Sumy State University Institutional Repository (Sumy State University)

Authors: Andrei Borzdov, В. М. Борздов, Dmitry Victorovich Pozdnyakov, Ф. Ф. Комаров

Institution: Belarusian State University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W1535923880

Cites: 1

Cited by:

Related to: 10