Work

Characterization and analysis of tiny in-line defect in 28nm process

Year: 2015

Type: conference-paper

Source: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

DOI: 10.1109/ipfa.2015.7224445

Authors: Gary Yaobin Zhao, J. H. Lee, Tom Dai, Mark Zhang, Kary Chien

Institution: Semiconductor Manufacturing International (China)

Language: English

Topic: Integrated Circuits and Semiconductor Failure Analysis

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1536454850

FWCI:

Cites: 2

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Related to: 10