Work

Device Scaling Considerations for Nanophotonic CMOS Global Interconnects

Year: 2013
Type: article
Abstract: We introduce an analytical framework to understand the path for scaling nanophotonic interconnects to meet the energy and footprint requirements of CMOS global interconnects. We derive the device requirements for sub-100 fJ/cm/bit interconnects including tuning power, serialization-deserialization energy, and optical insertion losses. Using CMOS with integrated nanophotonics as an example platform, we derive the energy/bit, linear, and areal bandwidth density of optical interconnects. We also derive the targets for device performance which indicate the need for continued improvements in insertion losses (40 Gb/s), tuning power (6 channels).
Language: English
Open Access status: green
OpenAlex ID: W1552397959
FWCI: 3.194
Cites: 68
Cited by: 41
Related to: 10