Effect of Alumina Buffers on the Stability of Top-Gate Amorphous InGaZnO Thin-Film Transistors on Flexible Substrates
Year: 2015
Type: article
Source: IEEE Electron Device Letters
Institutions: Hanyang University, LG (South Korea)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: LG Display
OpenAlex ID: W1554779312