Year: 2003
Type: preprint
Abstract: We report a persistent increase or decrease in the two-dimensional electron density of AlAs or GaAs quantum wells flanked by AlGaAs barriers, brought about by illuminating the samples at T ~ 4 K while simultaneously applying a voltage bias between a back gate and the two-dimensional electron gas. Control of the final carrier density is achieved by tuning the back gate bias during illumination. Furthermore, the strength of the persistent photoconductivity depends on the Al mole fraction in the back Al_{x}Ga_{1-x}As barrier, and is largest at $x \simeq 0.4$.
Source: arXiv (Cornell University)
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1559558740