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Experimental investigation of simulated space particulate radiation effects on micro- electronics

Year: 1964
Type: article
Abstract: Microelectronics, l i k e t h e i r more conventional s o l i d -s t a t e counterparts, a r e adversely affected by r a d i a t i o n environments such as those found i n outer space.These space radiation environments are b r i e f l y summarized.Proton i r r a d i a t i o n data a t 22, 40, 128, and 440 Mev a r e presented f o r t y p i c a l macroelectronic components such as low-, medium, and high-frequency t r a n s i s t o r s and compared with similarly i r r a d i a t e d discrete-and integratedc i r c u i t type of microcomponents.Damage tends t o vary inversely with energy.Integrated f l u x l e v e l s of approximately d l protons/cm2 a r e needed before t h e radiation e f f e c t s become noticeable.Integrated c i r c u i t s appear t o be s l i g h t l y more r e s i s ta n t t o r a d i a t i o n but t h i s finding may not be sign i f i c a n t on a s t a t i s t i c a l b a s i s .mental setup and c i r c u i t which were a c t u a l l y used i n the t e s t s are i l l u s t r a t e d and described.A t y p i c a l experi-/'
Authors: Floyd Bryant, E. Rind
Language: English
Open Access status: green
OpenAlex ID: W1570150777
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