X-ray absorption spectroscopy elucidates the impact of structural disorder on electron mobility in amorphous zinc-tin-oxide thin films
Year: 2014
Type: article
Abstract: We investigate the correlation between the atomic structures of amorphous zinc-tin-oxide (a-ZTO) thin films grown by atomic layer deposition (ALD) and their electronic transport properties. We perform synchrotron-based X-ray absorption spectroscopy at the K-edges of Zn and Sn with varying [Zn]/[Sn] compositions in a-ZTO thin films. In extended X-ray absorption fine structure (EXAFS) measurements, signal attenuation from higher-order shells confirms the amorphous structure of a-ZTO thin films. Both quantitative EXAFS modeling and X-ray absorption near edge spectroscopy (XANES) reveal that structural disorder around Zn atoms increases with increasing [Sn]. Field- and Hall-effect mobilities are observed to decrease with increasing structural disorder around Zn atoms, suggesting that the degradation in electron mobility may be correlated with structural changes.
Source: Applied Physics Letters
DOI: 10.1063/1.4884115
Authors: Sin Cheng Siah, Sang Woon Lee, Yun Seog Lee, Jaeyeong Heo, Tomohiro Shibata, Carlo U. Segre, Roy G. Gordon, Tonio Buonassisi
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
Funders: National Science Foundation, U.S. Department of Energy, Harvard University, Office of Science, Office of Naval Research, Division of Materials Research, Division of Chemical, Bioengineering, Environmental, and Transport Systems, Division of Electrical, Communications and Cyber Systems, Basic Energy Sciences, Argonne National Laboratory
Awards: G102163711, G107546177, G1286251239, G1313983767, G1505794299, G1657001476, G1664757510, CAREER:Toward robust, scalable, and non-intermittent solar power: Silicon-based multijunction devices with integrated photocatalysis, G2101401529, G2131454582, G2258931405, G2287611682, G262962599, G2887060908, G2904350642, G3075337988, G337158924, G340565428, G3589692066, G3725677605, G426311843, G4295775982, Solar Cells From Earth-Abundant Materials, G498139845, G5106849484, G513797252, G5387317844, G5409325224, G5910536577, NNIN: National Nanotechnology Infrastructure Network, MIT Materials Research Science and Engineering Center (MRSEC), G6671297155, G6848031779, G6918803902, G7234798665, G7368700025, G7583137537, G8679705529, G8861330349, G8876996369, G8898047084, G969889393, G993149817
OpenAlex ID: W1571573086