Work

Measurement and Analysis of I-v-t Characteristics of a Augeni/p-si Schottky Barrier Diode

Year: 2015

Type: article

Source: Courrier du Savoir (Universite de Biskra)

Authors: TERGHINI, W., SAADOUNE, A., DEHIMI, L., MEGHERBI, M.L., ÖZÇELIKC, S.

Institutions: University of Biskra, University of Batna 1, Gazi University

Language: French

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1572301838

FWCI: 0.169

Cites: 9

Cited by: 1

Related to: 10