Year: 2006
Type: preprint
Abstract: We report the first formation of the metallic $p$-$n$ junctions, the ferroelectric (Ba,Sr)TiO$_3$ (BST) switched optimally electron-doped ($n$-type) metallic T'-phase superconductor, (La,Ce)$_2$CuO$_4$ (LCCO), and hole-doped ($p$-type) metallic CMR manganite (La,Sr)MnO$_3$ (LSMO) junctions. In contrast with the previous semiconductor $p$-$n$ ($p$-$I$-$n$) junctions which are switched by the built-in field $V_0$, the present metallic oxides $p$-$I$-$n$ junctions are switched by double barrier fields, the built-in field $V_0$, and the ferroelectric reversed polarized field $V_{rp}$, both take together to lead the junctions to possess definite parameters, such as definite negligible reversed current ($10^{-9}$ A), large breakdown voltage ($>$7 V), and ultrahigh rectification ($>2\times10^4$) in the bias voltage 1.2 V to 2.0 V and temperature range from 5 to over 300 K. The related transport feature, barrier size effect, and temperature effect are also observed and defined.
Source: arXiv (Cornell University)
Authors: Yuan, J., Wu, H., Zhao, L., Jin, K., Cao, L. X., Zhu, B. Y., Zhu, S. J., Zhong, J. P., Miao, J., Yang, H., Xu, B., Qi, X. Y., Han, Y., Qiu, X. G., Duan, X. F., Zhao, B. R.
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1578370983