Work

Sequential write-read operations in FeRh antiferromagnetic memory

Year: 2015

Type: article

Abstract: B2-ordered FeRh has been known to exhibit antiferromagnetic-ferromagnetic (AF-F) phase transitions in the vicinity of room temperature. Manipulation of the Néel order via AF-F phase transition and recent experimental observation of the anisotropic magnetoresistance in antiferromagnetic FeRh has proven that FeRh is a promising candidate for antiferromagnetic memory material. In this work, we demonstrate sequential write and read operations in antiferromagnetic memory resistors made of B2-orderd FeRh thin films by a magnetic field and electric current only, which open a realistic pathway towards operational antiferromagnetic memory devices.

Source: Applied Physics Letters

DOI: 10.1063/1.4931567

Authors: Takahiro Moriyama, Noriko Matsuzaki, Kab-Jin Kim, Ippei Suzuki, Tomoyasu Taniyama, Teruo Ono

Institutions: Kyoto University, Kyoto University Institute for Chemical Research, Tokyo Institute of Technology

Language: English

Topic: Magnetic properties of thin films

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

Funder: Japan Society for the Promotion of Science

Awards: G1525963318, Spin current induced spin wave modulation and control of magnetic order, Spin-orbitronics and device application, Investigation of interactions between spin current and antiferromagnets